Investigation and reduction of hot electron induced punchthrough (HEIP) effect in submicron PMOSFETs

1 January 1986

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 722-725
https://doi.org/10.1109/iedm.1986.191295

Abstract

Hot carrier reliability in submicron PMOSFETs has been investigated. The punchthrough voltage is seriously reduced due to Hot Electron Induced Punch-through (HEIP) in submicron PMOSFETs. In order to mitigate the HEIP effect, an LDD PMOSFET has been optimized by examining the channel electric field, substrate and gate currents, and the threshold voltage shifts due to hot electron injection. A device lifetime of more than 10 years has been obtained using LDD PMOSFETs with gate lengths of 0.8 µm at the worst case supply voltage (5.5v).

Keywords

MOSFETS
THRESHOLD VOLTAGE
SUBSTRATE HOT ELECTRON INJECTION
DEGRADATION
STRESS
HOT CARRIERS
IMPACT IONIZATION
CMOS TECHNOLOGY
LABORATORIES
INTEGRATED CIRCUIT RELIABILITY