Investigation of trapping and recombination centers in Zn3xCd3(1−x)In2S6, layered crystals
- 1 September 1983
- journal article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 9 (1-3) , 341-348
- https://doi.org/10.1016/0254-0584(82)90033-5
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Optical properties of a ‘quasi-disordered’ semiconductor: ZnIn2S4Solid State Communications, 1973
- Charge storage in ZnIn2S4 single crystalsApplied Physics Letters, 1973
- Study of Localized Levels in Semi-Insulators by Combined Measurements of Thermally Activated Ohmic and Space-Charge-Limited ConductionPhysical Review B, 1969
- Trap Density Determination by Space-Charge-Limited CurrentsJournal of Applied Physics, 1962