Recombination of atomic hydrogen on low temperature surfaces
- 15 May 1976
- journal article
- research article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 64 (10) , 4135-4142
- https://doi.org/10.1063/1.431982
Abstract
The interaction of H and H2 thermal beams with low temperature inert surfaces has been studied under ultrahigh vacuum (uhv) conditions. The sticking coefficient and the recombination rate for H atoms have been found to depend strongly on the H2 coverage of the surface. In all cases studied when the recombination occurred the greatest part of the recombination energy went to the surface. The present results and those from previous works are interpreted on the basis of a simple model.Keywords
This publication has 9 references indexed in Scilit:
- Energy dependence of high resolution integral-collision-cross-section measurements for elastic scattering of H and D atoms by Hg at thermal energiesThe Journal of Chemical Physics, 1975
- Correlation functions in atom scattering from surfacesSurface Science, 1973
- Formation Mechanism for Interstellar MoleculesSymposium - International Astronomical Union, 1973
- Interaction of Atomic and Molecular Hydrogen Beams with Surfaces at Very Low TemperaturesJournal of Vacuum Science and Technology, 1972
- The scattering of helium atoms from surfacesJournal of Physics C: Solid State Physics, 1971
- Surface Recombination of Hydrogen MoleculesThe Astrophysical Journal, 1971
- Molecular Hydrogen in H i RegionsThe Astrophysical Journal, 1971
- Rocket Observation of Interstellar Molecular HydrogenThe Astrophysical Journal, 1970
- Condensation of Atomic and Molecular Hydrogen at Low TemperaturesThe Journal of Chemical Physics, 1961