Cu/SiO 2−x nanowires with compositional modulation structure grown via thermal evaporation
- 2 December 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (23) , 4425-4427
- https://doi.org/10.1063/1.1526453
Abstract
One-dimensional compositional modulation has been achieved in Cu/SiO 2−x nanowires prepared at the substrate temperature of 1000 ° C by thermal evaporation of a cuprous oxide and silicon mono-oxide mixture. The synthesized nanowires consist of the Cu spheres uniformly piled up along the longitudinal direction of the nanowires to form a modulation structure with an average period of about 140 nm. This periodicity could be adjusted by changing the CuO concentration in the source materials mixture.Keywords
This publication has 20 references indexed in Scilit:
- GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devicesJournal of Applied Physics, 2001
- Nanobelts of Semiconducting OxidesScience, 2001
- Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building BlocksScience, 2001
- Growth of amorphous silicon nanowires via a solid–liquid–solid mechanismPublished by Elsevier ,2000
- Doping and Electrical Transport in Silicon NanowiresThe Journal of Physical Chemistry B, 2000
- Nucleation and growth of Si nanowires from silicon oxidePhysical Review B, 1998
- Atomic layer epitaxy and molecular beam epitaxy of CdTe/MnTe superlattices: A structural and optical studyJournal of Applied Physics, 1998
- A Laser Ablation Method for the Synthesis of Crystalline Semiconductor NanowiresScience, 1998
- Polycrystalline silicon ‘‘slit nanowire’’ for possible quantum devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Fundamental aspects of VLS growthJournal of Crystal Growth, 1975