An amorphous silicon integrated inverter
- 1 October 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 29 (10) , 1646-1649
- https://doi.org/10.1109/t-ed.1982.20933
Abstract
Integration of hydrogenated amorphous silicon field effect transistors (a-Si FET's) has been investigated. It is shown that the new inverter which consists of an n-channel enhancement mode driver FET and a p-channel "depletion" mode load FET has excellent steplike transfer characteristics. With this integrated inverter, a small-signal gain of more than ten was measured and an integrated ring-oscillator of nine-stages operated for the first time. The power delay product and the minimum propagation delay time were about 480 pJ and 110 µs, respectively.Keywords
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