Indications for Nitrogen-Assisted Removal of Carbon from SiO2-SiC Interface

• 1 January 2001
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 353-356, 655-658
• https://doi.org/10.4028/www.scientific.net/msf.353-356.655

Abstract

Keywords

• GROWTH RATE
• NITRIDED OXIDE (NO AND N2O)
• OXIDATION
• SECONDARY ION MASS SPECTROSCOPY (SIMS) ANALYSIS
• SIO2-SIC INTERFACE