Modeling of emitter-base bulk and peripheral space-charge-layer recombination currents in bipolar transistors

1 December 1976

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 23 (12) , 1345-1346
https://doi.org/10.1109/t-ed.1976.18661

Abstract

The bulk and surface recombination currents of the E-B space-charge layer are related through a factor XFShaving the dimensions of length. The factor XFScan be determined experimentally and is an essential parameter for modeling hFEfall-off at low collector currents.

Keywords

FABRICATION
IRON
SPACE CHARGE
CURRENT DENSITY
RADIATIVE RECOMBINATION
IMPURITIES
PREDICTIVE MODELS
VOLTAGE
BIPOLAR TRANSISTOR
BIPOLAR TRANSISTORS
SPONTANEOUS EMISSION

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