GaInAs metal/semiconductor/metal photodetectors with Fe:InP barrier layers grown by chemical beam epitaxy
- 26 October 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (22) , 1479-1481
- https://doi.org/10.1049/el:19890992
Abstract
A GaInAs metal/semiconductor/metal (MSM) photodetector with a dark current less than 1μA is described. An Fe-doped InP layer was introduced between the metal and the GalnAs absorbing layer to improve the Schottky barrier height. A breakdown voltage of 30 V was achieved. A DC quantum efficiency of 64% and an impulse response, 1/e fall time of 190 ps were measured for a 20μm × 100μm device. The layer structure of our device is very attractive for integration with high-performance GaInAs/InP FETs.Keywords
This publication has 1 reference indexed in Scilit:
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