Anodic oxidation of a-Si:H films

6 January 1983

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 19 (1) , 6-7
https://doi.org/10.1049/el:19830005

Abstract

It is shown that thick native oxide layers (up to 2500 Å) can be grown on a-Si:H films at room temperature by anodic oxidation. Ellipsometric measurements indicate uniformity of the oxide layer with a refractive index of 1.46. The voltage growth rate is found to be 5.3 Å/V.

Keywords

REFRACTIVE INDEX
VOLTAGE GROWTH RATE
ELLIPSOMETRY
ROOM TEMPERATURE
THICK NATIVE OXIDE LAYERS
ANODIC OXIDATION
AMORPHOUS SI:H FILMS

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