Impact of SiC Structural Defects on the Degradation Phenomenon of Bipolar SiC Devices

• 1 September 2003
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 433-436, 917-920
• https://doi.org/10.4028/www.scientific.net/msf.433-436.917

Abstract

Keywords

• BERG-BARRETT TOPOGRAPHY
• BIPOLAR PN DIODE
• CARRIER RECOMBINATION
• DEGRADATION
• ELECTROLUMINESCENCE
• HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY
• HRXRD
• STACKING FAULT