Post-annealing of thin films of YBCO at temperatures and oxygen partial pressures used by in situ methods

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Abstract
Post‐deposition annealing of thin films of YBa2 Cu 3O7 (YBCO) at temperatures of 850–900 °C and in atmospheric pressure oxygen has yielded films with values of critical current density and microwave surface resistance over large areas comparable to those obtained by in situ methods. A recent improvement in the properties of post‐annealed films has come about by using low oxygen partial pressures, which allow annealing temperatures to be lowered as has been done by in situ methods. Surface smoothness, critical current density, and ac losses are all improved by using the new post‐annealing conditions. These results mean that high quality thin films of YBCO can be made over large areas and with double‐sided coating by ambient temperature film deposition and post‐annealing in a tube furnace.

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