Electronic Band Structure and Optical Anisotropy in InS. I. Experimental Study
- 1 August 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 142 (2) , 605-615
- https://doi.org/10.1002/pssb.2221420231
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Polarized Raman spectra of InS single crystalPhysica Status Solidi (b), 1983
- Optical anisotropy of orthorhombic InSJournal of Physics and Chemistry of Solids, 1983
- Preparation and Properties of InS Single CrystalsJapanese Journal of Applied Physics, 1977
- Electroreflectance measurements on indium sulfide grown from indium meltSolid State Communications, 1976
- Optical Absorption Edge of Layer Compound InS Grown from In MeltJapanese Journal of Applied Physics, 1974
- Excitonic Instabilities and Bond Theory of III-VI Sandwich SemiconductorsPhysical Review B, 1969
- Intrinsic Absorption-Edge Spectrum of Gallium PhosphidePhysical Review B, 1966
- Crystalline phases in the system In–In2S3Acta Crystallographica, 1966
- Twinning in InSPhysica Status Solidi (b), 1966
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955