Hopping conduction in partially compensated doped silicon
- 15 July 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (4) , 2312-2319
- https://doi.org/10.1103/physrevb.48.2312
Abstract
We have measured the dc electrical resistance of partially compensated (5–50 %) ion-implanted Si:P,B (both n and p type), over the temperature range 0.05–30 K. The temperature behavior is consistent with the prediction of the model for variable-range hopping (VRH) with a Coulomb gap ρ(T)=exp(/T over a temperature range 6.5/T
Keywords
This publication has 26 references indexed in Scilit:
- Cryogenic microcalorimeters for high resolution spectroscopy: current status and future prospectsNuclear Physics A, 1991
- Electrical self-calibration of nonideal bolometersApplied Optics, 1984
- Thermal detectors as x-ray spectrometersJournal of Applied Physics, 1984
- Monolithic silicon bolometersApplied Optics, 1984
- Bolometers: ultimate sensitivity, optimization, and amplifier couplingApplied Optics, 1984
- Bolometer noise: nonequilibrium theoryApplied Optics, 1982
- Coulomb gap and low temperature conductivity of disordered systemsJournal of Physics C: Solid State Physics, 1975
- Conduction in glasses containing transition metal ionsJournal of Non-Crystalline Solids, 1968
- Low-Temperature Germanium BolometerJournal of the Optical Society of America, 1961
- Impurity Conduction at Low ConcentrationsPhysical Review B, 1960