Magnetoresistance of Cd1−xMnxSe near the Mott transition
- 15 April 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (8) , 3210-3212
- https://doi.org/10.1063/1.335153
Abstract
At 0.5≤T≤4.2 K and for fields of order 10 kOe, a large positive magnetoresistance is observed in Cd0.95Mn0.05Se and Cd0.99Mn0.01Se samples which are near the Mott transition. The effect is attributed to an increase in the screening radius, caused by the splitting of the conduction band. At higher fields, but below ∼80 kOe, samples with 5% Mn show negative magnetoresistance which is attributed to a decrease in the separation between the Fermi level and the mobility edge.This publication has 10 references indexed in Scilit:
- Technical saturation and magnetization steps in diluted magnetic semiconductors: Predictions and observationsPhysical Review B, 1984
- Exchange energy, magnetization, and Raman scattering of (Cd,Mn)SePhysical Review B, 1984
- Electron Localization in a Magnetic Semiconductor:Physical Review Letters, 1983
- Hopping conduction of the bound magnetic polarons in n-CdMnSePhysica B+C, 1983
- Diluted magnetic semiconductors: An interface of semiconductor physics and magnetism (invited)Journal of Applied Physics, 1982
- Electrical conduction in CdSe near the metal-insulator transitionPhilosophical Magazine Part B, 1979
- Negative Magnetoresistance in the Anderson Localized StatesJournal of the Physics Society Japan, 1979
- Magnetoresistance due to conduction band splitting in magnetic semiconductorsAIP Conference Proceedings, 1975
- Ferromagnetic and antiferromagnetic semiconductorsUspekhi Fizicheskih Nauk, 1975
- Effect of spin splitting of the conduction band on the resistivity and Hall coefficient: Model for the positive magnetoresistance in EuSePhysical Review B, 1974