Atomic layer MBE growth and characterization of AlAsInAs strained layer superlattices on GaAs
- 31 December 1989
- journal article
- research article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 5 (1) , 5-9
- https://doi.org/10.1016/0749-6036(89)90060-8
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Low-Temperature Growth of AlAs/GaAs Heterostructures by Modulated Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1987
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1972