Factors Affecting Image Quality for Megavoltage and Diagnostic X-Ray a-Si:H Imaging Arrays.
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Two factors which could affect the image quality of the a-Si:H arrays under development by our collaboration are the temporal drift of the leakage current of the sensors and the capture and release of charge in deep trapping states in the sensors. Data for both of these factors are reported, the implications for imaging are discussed, and strategies for reducing or eliminating their effects are suggested.Keywords
This publication has 3 references indexed in Scilit:
- Long-time transient conduction in a-Si:H p─i─n devicesPhilosophical Magazine Part B, 1991
- Light-Response Characteristics of Amorphous Silicon Arrays for Megavoltage and Diagnostic ImagingMRS Proceedings, 1991
- Amorphous Silicon Sensor Arrays for Radiation ImagingMRS Proceedings, 1990