Application of selective silicon epitaxial growth for CMOS technology
- 1 November 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (11) , 1738-1744
- https://doi.org/10.1109/t-ed.1986.22736
Abstract
The application of selective silicon epitaxial growth for device isolation is described. An improved selective epitaxial isolation technology is presented in the fabrication of CMOS LSI. This advanced process technology results from a superior selectivity for selective silicon deposition. A CMOS ring oscillator with a twin-well structure is fabricated by using this selective epitaxial isolation technology. The feasibility of using an oversized contact, due to the nature of its steeper oxide-to-silicon isolation boundary, is demonstrated.Keywords
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