Effective collision strengths for Si III
Open Access
- 1 November 1989
- journal article
- Published by Oxford University Press (OUP) in Monthly Notices of the Royal Astronomical Society
- Vol. 241 (2) , 209-214
- https://doi.org/10.1093/mnras/241.2.209
Abstract
Collision strengths are presented for electron impact excitation among the 12 lowest LS states (corresponding to 20 levels including the splitting of the triplet terms) of Si III calculated using the R-matrix method. These collision strengths are used to deduce effective collision strengths, adopting a Maxwellian electron energy distribution. Polynomial fits of the effective collision strength are tabulated for all transitions between the fine structure levels for electron temperatures (Te) between log Te = 3.8 and 5.2. For selected transitions, information on the collision strength near threshold is also tabulated. This should be sufficient to estimate the effect of deviations from the Maxwellian electron energy distribution, such as may occur in the solar transition region.Keywords
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