Growth of highly (111)-oriented, highly coalesced diamond films on platinum (111) surface: A possibility of heteroepitaxy
- 1 December 1996
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 11 (12) , 2955-2956
- https://doi.org/10.1557/jmr.1996.0373
Abstract
A highly (111)-oriented, highly coalesced diamond film was grown on platinum (111) surface by microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscopy and x-ray diffraction analyses revealed that the (111) diamond facets were azimuthally oriented epitaxially with respect to the orientation of the Pt(111) domain underneath, with the neighboring facets of diamond being coalesced with each other. The film was confirmed as diamond using Raman spectroscopy.Keywords
This publication has 8 references indexed in Scilit:
- Analysis of the structure of multi-component carbon films by resonant Raman scatteringJournal of Applied Physics, 1994
- Epitaxial diamond thin films on (001) silicon substratesApplied Physics Letters, 1993
- Catalytic interaction of Fe, Ni and Pt with diamond films: patterning applicationsDiamond and Related Materials, 1993
- Diamond synthesis on a metal substrateDiamond and Related Materials, 1993
- Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor depositionApplied Physics Letters, 1992
- Effects of oxygen on diamond growth using platinum substratesJournal of Applied Physics, 1991
- States of surface carbon during diamond growth on PtSurface Science, 1990
- Diamond formation on platinumJournal of Applied Physics, 1989