Nonradiative regions in GaInAsP/InP double heterostructure laser material: correlation with dislocation clusters in the substrates

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Abstract
The results of an examination of GaInAsP/InP laser material grown by liquid phase epitaxy using transmission cathodoluminescence, polarised infra-red microscopy and electrochemical etching techniques are reported. It is shown that dislocation clusters in the InP substrate give rise to non-radiative regions in the active layer.