p-Channel MOS transistor in indium antimonide
- 1 October 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 22 (10) , 960-961
- https://doi.org/10.1109/T-ED.1975.18249
Abstract
A p-channel MOS transistor in InSb single crystal, operating at 77 K, is described. The source and drain are defined by etching a mesa structure in a cadmium diffused p layer into a tellurium-doped InSb substrate. The gate is formed by evaporation of chromium gold on top of a layer of SiO2, deposited at 215°C. The MOS transistor is characterized by a threshold voltage of -3 V and an effective hole mobility of 330 cm2. V-1.s-1.Keywords
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