Electronic Raman continuum for : Effects of inelastic scattering and interband transitions
- 1 May 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (17) , 11603-11606
- https://doi.org/10.1103/physrevb.47.11603
Abstract
The electronic Raman continuum in is calculated in a model which takes into account strong inelastic scattering and interband transitions. The ab-plane polarized continuum contains a large contribution from interband processes and does not depend strongly on temperature and the inelastic scattering strength. The in-plane anisotropy is determined by the interband transitions rather than by the anisotropy of the Fermi surface. The ZZ continuum can be crudely described within a single-band model with inelastic scattering and is very dependent on the relaxation rates of inelastic scattering. The nature of the oxygen-deficiency dependence of the Raman spectra is also commented upon.
Keywords
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