Depth profiles of interstitial halogen defects in high-energy ion-bombarded RbI by micro-Raman spectroscopy

Micro-Raman spectroscopy has been used to measure the depth profiles of halogen aggregates in both x-irradiated and ion-bombarded RbI. In experiments using argon ions of energy 13.6 MeV/A, it is shown that the ${\mathit{I}}_{\mathit{n}}^{\mathrm{-}}$ clusters are significantly enhanced in the region of large excitation density near the maximum in electronic energy loss at the expense of the ${\mathit{I}}_3^{\mathrm{-}}$ defects. The investigations of fluence dependence show that the number of ${\mathit{I}}_3^{\mathrm{-}}$ defects is progressively enhanced with increasing fluence at all depths within the damaged region. The results are examined in the light of current theoretical models of ion-beam interactions with alkali halides. © 1996 The American Physical Society.