An improved gate breakdown model for studying high efficiency MESFET operation
- 30 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- An Investigation of Efficiency Limiting Mechanisms in GaAs MESFET AmplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- Gate breakdown in MESFETs and HEMTsIEEE Electron Device Letters, 1991
- A Gate Breakdown Mechanism in Mesfets and HEMTsMRS Proceedings, 1991