Vanishing Schottky barriers in diamond/metal interfaces
Open Access
- 31 March 1992
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 81 (11) , 891-894
- https://doi.org/10.1016/0038-1098(92)90863-5
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Exchange-correlation potentials in Schottky barriers and heterojunctionsPhysical Review Letters, 1990
- Electronic structure of an ideal diamond-nickel (001) interfacePhysical Review B, 1990
- Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfacesPhysical Review Letters, 1990
- Current Issues and Problems in the Chemical Vapor Deposition of DiamondScience, 1990
- Loss of epitaxy during diamond film growth on ordered Ni(100)Journal of Applied Physics, 1989
- Electronic structure and Schottky-barrier heights of (111)/Si A- and B-type interfacesPhysical Review Letters, 1989
- Theoretical calculations of heterojunction discontinuities in the Si/Ge systemPhysical Review B, 1986
- Linearized augmented-plane-wave calculation of the electronic structure and total energy of tungstenPhysical Review B, 1985
- Schottky-Barrier Formation at Single-Crystal Metal-Semiconductor InterfacesPhysical Review Letters, 1984
- The diamond surfaceSurface Science, 1977