Explanation of low-frequency relative intensity noise in semiconductor lasers
- 27 August 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (9) , 849-851
- https://doi.org/10.1063/1.103385
Abstract
For the first time, the enhanced low-frequency relative intensity noise characteristics of semiconductor lasers is explained. It is shown, by multimode rate equation analysis, that the enhanced low-frequency noise is caused by coupling between longitudinal modes which can renormalize the resonance frequency of the individual modes to very low values. It is further shown that a single-mode laser will also exhibit enhanced low-frequency noise unless the side-mode suppression is high.Keywords
This publication has 5 references indexed in Scilit:
- Theory and experiment of the parasitic-free frequency response measurement technique using facet-pumped optical modulation in semiconductor diode lasersApplied Physics Letters, 1989
- Effect of low-frequency intensity noise on high-frequency direct modulation of semiconductor injection lasersApplied Physics Letters, 1988
- Theory of spontaneous emission noise in open resonators and its application to lasers and optical amplifiersJournal of Lightwave Technology, 1986
- Strong influence of nonlinear gain on spectral and dynamic characteristics of InGaAsP lasersElectronics Letters, 1985
- Measurement of radiative and auger recombination rates in p -type InGaAsP diode lasersElectronics Letters, 1982