p + –n hyperabrupt GaAs varactors grown by molecular-beam epitaxy
- 23 November 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (24) , 752-753
- https://doi.org/10.1049/el:19780509
Abstract
Gallium-arsenide p–n junction hyperabrupt varactor diodes have been grown by molecular-beam epitaxy. Near the junction the donor profile at depth x tracked x−1.2. A capacitance ratio C0/C12 of 10 is observed for bias voltages of 0 and 12 V.Keywords
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