Photo-Cvd Silicon Nitride for Gaas Mesfet Passivation
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Effects of Si3N4, SiO, and polyimide surface passivations on GaAs MESFET amplifier RF stabilityIEEE Electron Device Letters, 1984
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- Trap studies on GaAs–Si3N4 interfacesJournal of Vacuum Science and Technology, 1981
- Stability of performance and interfacial problems in GaAs MESFET'sIEEE Transactions on Electron Devices, 1980
- Determination of the Properties of Films on Silicon by the Method of EllipsometryJournal of the Optical Society of America, 1962