Growth of SrTiO[sub 3] and BaTiO[sub 3] Thin Films by Atomic Layer Deposition
- 1 January 1999
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 2 (10) , 504-506
- https://doi.org/10.1149/1.1390884
Abstract
And thin films were deposited by atomic layer deposition making use of a novel class of strontium and barium precursors, i.e., their cyclopentadienyl compounds, together with titanium tetraisopropoxide and water. films were grown at from strontium bis(triisopropylcyclopentadienyl) and at from barium bis(pentamethylcyclopentadienyl). After annealing in air at , permittivities of 180 and 165 were measured for and , respectively. The films showed excellent conformality and complete filling of test trench structures. ©1999 The Electrochemical SocietyKeywords
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