High-frequency behavior of hot electrons in one-valley polar semiconductors
- 1 May 1970
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 31 (5) , 1151-1161
- https://doi.org/10.1016/0022-3697(70)90324-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Hot electron effects at microwave frequencies in GaAsSolid State Communications, 1969
- Microwave incremental conductivity of InSb at 77°K in the presence of high steady electric fieldElectronics Letters, 1969
- On the Anisotropic Microwave Conductivity in the Hot‐Electron Region of n‐InSbPhysica Status Solidi (b), 1969
- Anisotropy of Small-Signal Microwave Conductivity due to Hot Electrons in InSbJournal of Applied Physics, 1968
- Microwave conductivity of polar semiconductors in the presence of a high electric fieldElectronics Letters, 1968
- Microwave conductivity of polar semiconductors in the presence of high electric fieldElectronics Letters, 1967
- Microwave conductivity anisotropy of hot electrons in n-InSb at 77°kProceedings of the IEEE, 1967
- The microwave conductivity of germaniumProceedings of the IEEE, 1964
- A study of energy-loss processes in germanium at high electric fields using microwave techniquesJournal of Physics and Chemistry of Solids, 1961
- Dielectric Breakdown in SolidsProceedings of the Physical Society. Section B, 1956