Tunneling effective mass in hydrogenated amorphous silicon
- 12 April 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (15) , 1815-1817
- https://doi.org/10.1063/1.109558
Abstract
The tunneling effective mass of electrons in undoped a‐Si:H has been determined from measurements on Schottky diodes operating with high reverse fields. Under these conditions, the change of current with electric field is a sensitive function of effective mass. The tunneling effective mass was measured to be 0.09±0.02 me for a range of different samples giving a tunneling constant of ≊40 Å.Keywords
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