A Survey of the Cr-Rich Area of the Cr-Si-C Phase Diagram

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Abstract
An investigation of the ternary phase diagram Cr‐Si‐C has been completed in the region . Phase boundaries have been established to an accuracy of ±2 a/o (atomic per cent). The extent of a ternary single‐phase region of approximate stoichiometry is established. Lattice parameter measurements of this phase show that all or nearly all C enters the structure at interstitial sites, rather than substitutionally as previously reported. Finally, the possibility of crystal growth from solutions of transition metal silicides is discussed.

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