Atomic force microscopy on bare and thiol monolayer covered gallium arsenide
- 31 August 2001
- journal article
- research article
- Published by Elsevier in Materials Letters
- Vol. 50 (2-3) , 73-77
- https://doi.org/10.1016/s0167-577x(00)00416-x
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Structural characterization of GaAs/thiol/electrolyte interfaceMaterials Letters, 2000
- Impedance Spectroscopy of Porin and Gramicidin Pores Reconstituted into Supported Lipid Bilayers on Indium−Tin-Oxide ElectrodesLangmuir, 1998
- The characterization of etched GaAs surface with HCl or H3PO4 solutionsThin Solid Films, 1997
- Ultrathin Hydrated Dextran Films Grafted on Glass: Preparation and Characterization of Structural, Viscous, and Elastic Properties by Quantitative MicrointerferometryLangmuir, 1996
- A new class of organized self-assembled monolayers: alkane thiols on gallium arsenide(100)Journal of the American Chemical Society, 1992
- Electron mobilities exceeding 107 cm2/V s in modulation-doped GaAsApplied Physics Letters, 1989