Photoetching of InP mesas for production of mm-wave transferred-electron oscillators

31 March 1977

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 13 (7) , 171-172
https://doi.org/10.1049/el:19770125

Abstract

A novel technique for fabricating small-diameter mesa-shaped structures on semiconducting substrates is described. The mesas, which are formed by etching and selective illumination of the substrate, show very little undercutting. The technique is suited for fabricating InP and GaAs transferred-electron oscillators, as well as impatt-diode structures for millimetre-wave sources.

Keywords

MICROWAVE OSCILLATORS
MESA SHAPED STRUCTURES
MM WAVE TRANSFERRED ELECTRON OSCILLATORS
PHOTOETCHING
SELECTIVE ILLUMINATION
INP

This publication has 0 references indexed in Scilit: