A phenomenological model for systematization and prediction of doping limits in II–VI and I–III–VI2 compounds
- 15 March 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 83 (6) , 3192-3196
- https://doi.org/10.1063/1.367120
Abstract
Semiconductors differ widely in their ability to be doped. As their band gap increases, it is usually possible to dope them either or type, but not both. This asymmetry is documented here, and explained phenomenologically in terms of the “doping pinning rule.”
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