Morphology evolution during strained (In,Ga)As epitaxial growth on GaAs vicinal (100) surfaces
- 26 August 2003
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (9) , 1749-1751
- https://doi.org/10.1063/1.1606891
Abstract
Molecular-beam-epitaxy growth of strained (In,Ga)As on GaAs vicinal (100) surfaces is investigated by scanning tunneling microscopy. Surface roughing as the consequence of step bunching driven by strain is explored. By tuning the In content over the range from 0.05 to 0.2, the step bunching is observed to exhibit considerable uniformity and order. These results experimentally demonstrate that strain-driven step bunching is a viable approach to provide templates for nanostructure growth.Keywords
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