Broadband high-efficiency monolithic InGaP/GaAs HBT power amplifiers for 3G handset applications
- 25 June 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2 (0149645X) , 1035-1038
- https://doi.org/10.1109/mwsym.2002.1011812
Abstract
In this paper, an approach to high efficiency power amplifier performance over a wide frequency range is discussed. Results for practical implementation of a multiband and multi-mode handset power amplifier are shown. Measurements demonstrate feasibility of the concept for WCDMA, DCS1800 and PCS1900 high-efficient operation. A PAE of better than 38% at 27 dBm output power and an ACLR of -37 dBc in WCDMA operation, as well as greater than 50% PAE at 30 dBm output power in the DCS1800 and PCS1900 band are documented.Keywords
This publication has 3 references indexed in Scilit:
- A 50% efficiency InGaP/GaAs HBT power amplifier module for 1.95 GHz wide-band CDMA handsetsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Broadband power efficient Class E amplifiers with a non-linear CAD model of the active MOS deviceJournal of the Institution of Electronic and Radio Engineers, 1987
- A circuit technique for broadbanding the electronic tuning range of Gunn oscillatorsIEEE Journal of Solid-State Circuits, 1977