Influence of carrier diffusion effects on window thickness of semiconductor detectors
- 15 March 1970
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 79 (2) , 329-332
- https://doi.org/10.1016/0029-554x(70)90159-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- ORIGIN OF FIELD-DEPENDENT COLLECTION EFFICIENCY IN CONTACT-LIMITED PHOTOCONDUCTORSApplied Physics Letters, 1969
- Window Thickness and Rectifying Process in Surface Barrier DetectorsIEEE Transactions on Nuclear Science, 1968
- Die Beweglichkeit “heisser” elektronen und ihr einfluss auf die Anstiegszeit der impulse von Halbleiterzählern aus n-siliziumNuclear Instruments and Methods, 1965
- Response of Silicon Surface Barrier Detectors to Hydrogen Ions of Energies 25 to 250 KEVIRE Transactions on Nuclear Science, 1962