Self-assembled island formation in heteroepitaxial growth

Preprint

31 March 1997

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/9703252

Abstract

We investigate island formation during heteroepitaxial growth using an atomistic model that incorporates deposition, activated diffusion and stress relaxation. For high misfit the system naturally evolves into a state characterized by a narrow island size distribution. The simulations indicate the existence of a strain assisted kinetic mechanism responsible for the self-assembling process, involving enhanced detachment of atoms from the edge of large islands and biased adatom diffusion.

Keywords

FORMATION IN HETEROEPITAXIAL
HETEROEPITAXIAL GROWTH
INVESTIGATE ISLAND
ASSEMBLED ISLAND
ISLAND FORMATION
DIFFUSION
ATOMISTIC

All Related Versions

Version 1, 1997-03-31, ArXiv
Published version: Applied Physics Letters, 70 (19), 2565.