Dynamics of ablation of polymethyl methacrylate films by near ultraviolet light of an Ar+laser
- 1 January 1994
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 27 (1) , 19-24
- https://doi.org/10.1088/0022-3727/27/1/003
Abstract
The dynamics of cw near ultraviolet (NUV) laser ablation of polymethyl methacrylate (PMMA) films are investigated by recording the time dependence of the reflected light power. A new phenomenon in cw light ablation of PMMA, which is similar to 'incubation' pulses in excimer laser ablation, is recognized as the 'incubation' period of ablation, when polymer fragments are accumulated up to a critical density followed by a volume explosion. The incubation time is found to decrease when the light intensity in the film and/or the film temperature increases. However, for sufficiently high light intensities the incubation time depends only upon the film temperature. A dynamic model of the ablation process during the incubation time is proposed which accounts for the main features of our observations and provides a consistent quantitative description of the mechanism underlying the initial stage of ablation, i.e. before the volume explosion.Keywords
This publication has 14 references indexed in Scilit:
- Direct writing in polymethyl methacrylate films using near-ultraviolet light of Ar+ laserJournal of Applied Physics, 1992
- Photokinetic etching of polymethyl methacrylate films by continuous wave ultraviolet laser radiationJournal of Applied Physics, 1991
- Nature of ‘‘incubation pulses’’ in the ultraviolet laser ablation of polymethyl methacrylateJournal of Applied Physics, 1990
- Use of temporally coincident ultraviolet laser pulses of two different wavelengths to ablate organic polymersJournal of Applied Physics, 1990
- In situ preparation of Bi-Sr-Ca-Cu-O superconducting films by laser sputteringApplied Physics A, 1989
- Deep ultraviolet laser etching of vias in polyimide filmsApplied Physics Letters, 1989
- Ablation and etching of polymethylmethacrylate by very short (160 fs) ultraviolet (308 nm) laser pulsesApplied Physics Letters, 1987
- Dynamics of UV laser ablation of organic polymer surfacesJournal of Applied Physics, 1986
- Direct writing in self-developing resists using low-power cw ultraviolet lightJournal of Applied Physics, 1985
- Deep UV Ablation of PMMA ResistsJapanese Journal of Applied Physics, 1983