Absorption edge measurements in tin disulphide thin films
- 14 June 1982
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 15 (6) , 1109-1116
- https://doi.org/10.1088/0022-3727/15/6/021
Abstract
Thin films of tin disulphide have been prepared by the reactive evaporation of the individual components. It has been found that a sulphur flux of 1.5*1016 to 2.8*1016 molecules cm-2 s-1, a metal atom flux of 4*1014 to 1.5*1015 atoms cm-2 s-1, and a substrate temperature in the range 295-335K gives good stoichiometric films. Optical absorption studies indicate that the fundamental absorption edge arises due to an allowed indirect transition at 2.12+or-0.02 eV. An indirect allowed transition at 2.31+or-0.02 eV, not reported earlier, has also been detected.Keywords
This publication has 12 references indexed in Scilit:
- Electrical conduction in coevaporated antimony trisulphide filmsSolid State Communications, 1980
- Raman spectra of SnS2 and SnSe2Solid State Communications, 1976
- Crystal Growth and Photoconductive Effects of Stannic ChalcogenidesJournal of the Physics Society Japan, 1972
- Electrical and photoconductive properties of SnS2 crystalsJournal of Physics D: Applied Physics, 1971
- On the optical properties of some layer compoundsJournal of Physics and Chemistry of Solids, 1969
- Optical and electrical properties of SnSe2Journal of Physics D: Applied Physics, 1969
- Fundamental Optical Absorption in Snand SnPhysical Review B, 1966
- Preparation and optical properties of group IV–VI2 chalcogenides having the CdI2 structureJournal of Physics and Chemistry of Solids, 1965
- Vapor-Deposited Thin-Film Piezoelectric TransducersReview of Scientific Instruments, 1965
- Einfluß eines elektrischen Feldes auf eine optische AbsorptionskanteZeitschrift für Naturforschung A, 1958