New electron trap in p-type Czochralski silicon
- 1 January 1984
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1) , 42-44
- https://doi.org/10.1063/1.94545
Abstract
A new electron trap (acceptor level) was discovered in p‐type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 °C annealing increases the trap concentration while high‐temperature annealing (1100–1200 °C) leads to the virtual elimination of the trap. The new trap is not observed in either float‐zone or n‐type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.Keywords
This publication has 8 references indexed in Scilit:
- Oxygen-induced recombination centers in as-grown Czochralski silicon crystalsApplied Physics Letters, 1983
- Oxygen-related donor states in siliconApplied Physics Letters, 1981
- Current transient spectroscopy: A high-sensitivity DLTS systemIEEE Transactions on Electron Devices, 1980
- Energy Levels in SiliconAnnual Review of Materials Science, 1980
- Lifetime improvement in Czochralski-grown silicon wafers by the use of a two-step annealingApplied Physics Letters, 1980
- Gettering of surface and bulk impurities in Czochralski silicon wafersApplied Physics Letters, 1978
- Silicon solar cells by high-speed low-temperature processingIEEE Transactions on Electron Devices, 1977
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938