Depth profiles of vacancy-type defect in Si+-implanted GaAs resulting from rapid thermal annealing

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Abstract
Depth profiles of vacancy‐type defects in the active region of annealed Si+‐implanted GaAs were measured by means of the monoenergetic positron beam measurements. Parabolic‐type distributions for vacancy‐type defects in the depth below the surface were observed in two‐step annealed Si+‐implanted GaAs. Activation properties by Hall measurements were improved by a two‐step rapid thermal annealing technique, whereas the concentration of vacancy defects in active layer below the surface is not changed.