Resonant tunneling diodes and transistors with a one-, two-, or three-dimensional electron emitter
- 1 November 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (9) , 4634-4646
- https://doi.org/10.1063/1.346173
Abstract
We calculate the current versus emitter to collector voltage, current versus emitter Fermi energy, and current versus potential energy in the quantum well for double-barrier resonant tunneling devices having a one-, two-, or three-dimensional electron emitter. We consider both transistor and diode operation of the devices. For each device, the current is obtained using a method which describes the effects of finite temperature, finite voltage, and free-electron motion perpendicular to the tunneling direction as independent convolutions.This publication has 34 references indexed in Scilit:
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