Material electronic quality specification factors for polycrystalline silicon wafers
- 17 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The Electrical Activity of Dislocations in Edge-Defined Film-Fed Growth SiliconSolid State Phenomena, 1994
- Method for the measurement of long minority carrier diffusion lengths exceeding wafer thicknessApplied Physics Letters, 1993
- Precipitation of Iron in Polycrystalline SiliconPhysica Status Solidi (a), 1993
- Monitoring of Heavy Metal Contamination during Chemical Cleaning with Surface PhotovoltageJournal of the Electrochemical Society, 1993
- Improvements in IR photocurrent scanningSolar Cells, 1990