Homogeneously size distributed Ge nanoclusters embedded in SiO2 layers produced by ion beam synthesis
- 1 January 1999
- journal article
- conference paper
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 147 (1-4) , 361-366
- https://doi.org/10.1016/s0168-583x(98)00542-4
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Room-temperature visible luminescence from silicon nanocrystals in silicon implanted SiO2 layersApplied Physics Letters, 1995
- Photoluminescence of Si Microcrystals Embedded in SiO2 Glass FilmsJapanese Journal of Applied Physics, 1994
- Visible photoluminescence in Si+-implanted silica glassJournal of Applied Physics, 1994
- Violet and Blue Light Emissions from Nanocrystalline Silicon Thin FilmsJapanese Journal of Applied Physics, 1994
- Semiconductor Nanocrystals formed in SiO2 by Ion ImplantationMRS Proceedings, 1994
- Control of and Mechanisms for Room Temperature Visible light Emission from Silicon Nanostructures in SiO2 formed by Si+ Ion ImplantationMRS Proceedings, 1994
- Visible photoluminescence from oxidized Si nanometer-sized spheres: Exciton confinement on a spherical shellPhysical Review B, 1993
- Ion Beam Synthesis of Luminescent Si and Ge Nanocrystals in a Silicon Dioxide MatrixMRS Proceedings, 1993
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Quantum size effects on photoluminescence in ultrafine Si particlesApplied Physics Letters, 1990