Lattice imaging of faulted dipoles in silicon

1 January 1979

journal article
research article
Published by Taylor & Francis in Philosophical Magazine A

Vol. 39 (1) , 59-63
https://doi.org/10.1080/01418617908239275

Abstract

A lattice image containing an intrinsically faulted Z dislocation dipole in the end-on orientation in silicon has been used to obtain the value γ = 76 ± 12 erg cm⁻² for the stacking-fault energy in silicon.

Keywords

This publication has 9 references indexed in Scilit:

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