Observation of novel transport phenomena in aSi0.8Ge0.2two-dimensional hole gas

We report measurements of the magnetoresistance and Hall coefficient of a two-dimensional hole gas defined at a remote-doped Si/${\mathrm{Si}}_{0.8}$ ${\mathrm{Ge}}_{0.2}$ heterojunction. In addition to the usual quantum interference and interaction corrections, one can clearly resolve effects relating to the temperature dependence of the static dielectric function, strain-induced suppression of spin-orbit scattering, and anisotropy of the hole g factor. A number of issues worthy of further theoretical study are suggested.