Fabrication of Bond and Etch‐Back Silicon on Insulator Using a Strained Si0.7Ge0.3 Layer as an Etch Stop
- 1 October 1990
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 137 (10) , 3219-3223
- https://doi.org/10.1149/1.2086190
Abstract
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