AlGaAs/GaAs multiquantum-well (MQW) surface-emitting laser
- 8 June 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (12) , 770-771
- https://doi.org/10.1049/el:19890520
Abstract
In the letter the lasing characteristics of a multiquantum-well surface-emitting injection laser with 100 wells at 77 K under pulsed condition is reported. The output light of the device was linearly polarised.Keywords
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